data sheet 1 of 9 2004-10-05 typical edge performance v dd = 28 v, i dq = 150 ma, f = 959.8 mhz 0 1 2 3 4 5 28 30 32 34 36 38 output power (dbm) rms evm (average %) . 0 10 20 30 40 50 drain efficiency (%) evm efficiency t case = 25c t case = 85c PTF080101S features ? thermally-enhanced packaging ? broadband internal matching ? typical edge performance - average output power = 5 w - gain = 18.5 db - efficiency = 38% ? typical cw performance - output power at p?1db = 13 w - gain = 17.5 db - efficiency = 55% ? integrated esd protection: human body model, class 1 (minimum) ? excellent thermal stability ? low hci drift ? capable of handling 10:1 vswr @ 28 v, 10 w (cw) output power esd: electrostatic discharge sensitive device?observe handling precautions! thermally-enhanced high power rf ldmos fet 10 w, 860 ? 960 mhz PTF080101S package 32259 rf characteristics at t case = 25c unless otherwise indicated edge measurements ( not subject to production test?verified by design/characterization in infineon test fixture ) v dd = 28 v, i dq = 150 ma, p out = 5.0 w, f = 959.8 mhz characteristic symbol min typ max units error vector magnitude evm (rms) ? 2.0 ? % modulation spectrum @ 400 khz acpr ? ?61 ? dbc modulation spectrum @ 600 khz acpr ? ?71 ? dbc gain g ps ? 18.5 ? db drain efficiency h d ? 38 ? % description the PTF080101S is a 10-watt, internally-matched goldmos fet in- tended for edge and cdma applications in the 860 to 960 mhz band. thermally-enhanced packaging provides the coolest operation possible. full gold metallization ensures excellent device lifetime and reliability.
data sheet 2 of 9 2004-10-05 PTF080101S rf characteristics (cont.) two-tone measurements (tested in infineon test fixture) v dd = 28 v, i dq = 150 ma, p out = 10 w pep, f = 960 mhz, tone spacing = 1 mhz characteristic symbol min typ max units gain g ps 18.0 18.5 ? db drain efficiency h d 36.0 38 ? % intermodulation distortion imd ? ?32 ?30 dbc dc characteristics at t case = 25c unless otherwise indicated characteristic conditions symbol min typ max units drain-source breakdown voltage v gs = 0 v, i ds = 10 a v (br)dss 65 ? ? v drain leakage current v ds = 28 v, v gs = 0 v i dss ? ? 1.0 a on-state resistance v gs = 10 v, i ds = 0.1 a r ds(on) ? 0.83 ? w operating gate voltage v ds = 28 v, i dq = 150 ma v gs 2.5 3.2 4.0 v gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1.0 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs ?0.5 to +12 v junction temperature t j 200 c total device dissipation p d 58 w above 25c derate by 0.333 w/c storage temperature range t stg ?40 to +150 c thermal resistance (t case = 70c) r q jc 3.0 c/w ordering information type package outline package description marking PTF080101S 32259 thermally-enhanced smd, single-ended PTF080101S
data sheet 3 of 9 2004-10-05 PTF080101S edge modulation spectrum performance v dd = 28 v, i dq = 150 ma, f = 959.8 mhz -80 -75 -70 -65 -60 -55 28 30 32 34 36 38 output power (dbm) modulation spectrum (dbc) 0 10 20 30 40 50 drain efficiency (%) efficiency 400 khz 600 khz t case = 25c t case = 85c evm & modulation spectrum performance v dd = 28 v, p out = 4 w, f = 959.8 mhz 1.0 1.2 1.4 1.6 1.8 2.0 0.08 0.10 0.12 0.14 0.16 0.18 0.20 0.22 quiscent drain current (a) evm rms (average %) . -80 -75 -70 -65 -60 -55 modulation spectrum (dbc) evm 400 khz 600 khz gain & efficiency vs. output power v dd = 28 v, i dq = 150 ma, f = 960 mhz 14 15 16 17 18 19 20 21 20 25 30 35 40 45 output power (dbm) gain (db) 0 10 20 30 40 50 60 70 drain efficiency (%) efficiency gain broadband performance v dd = 28 v, i dq = 150 ma, p out = 10 w -20 -10 0 10 20 30 840 860 880 900 920 940 960 frequency (mhz) gain (db), return loss (db) 10 20 30 40 50 60 drain efficiency (%) gain return loss efficiency typical performance (measurements taken in production test fixture) all published data at t case = 25c unless otherwise indicated
data sheet 4 of 9 2004-10-05 PTF080101S gain vs. output power v dd = 28 v, f = 960 mhz 17.5 18.5 19.5 20.5 27 30 33 36 39 42 output power (dbm) power gain (db) i dq = 150 ma i dq = 300 ma i dq = 50 ma output power vs. supply voltage i dq = 150 ma, f = 960 mhz 37 38 39 40 41 42 20 25 30 35 supply voltage (v) output power (dbm) intermodulation distortion vs. output power v dd = 28 v, i dq = 150 ma, f 1 = 959 mhz, f 2 = 960 mhz -80 -70 -60 -50 -40 -30 -20 25 30 35 40 45 output power, pep (dbm) imd (dbc) 3rd order 7th 5th 3-carrier cdma 2000 performance v dd = 28 v, i dq = 150 ma, f = 960 mhz 0 5 10 15 20 25 30 35 40 45 50 22 24 26 28 30 32 34 36 38 40 output power (dbm) drain efficiency (%) -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 adj. ch. power ratio (dbc) efficiency alt 2, 5.23 mhz adj 1.98 mhz alt 1, 3.21 mhz typical performance (cont.)
data sheet 5 of 9 2004-10-05 PTF080101S is-95 cdma performance v dd = 28 v, i dq = 150 ma, f = 960 mhz 0 5 10 15 20 25 30 35 40 18 20 22 24 26 28 30 32 34 36 38 output power (dbm), avg. drain efficiency (%) -80 -75 -70 -65 -60 -55 -50 -45 -40 adj. ch. power ratio (dbc) adj 750 khz alt 1 1.98mhz efficiency gate-source voltage vs. temperature voltage normalized to typical gate voltage, series show current 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 1.04 -20 0 20 40 60 80 100 case temperature (c) normalized bias voltage 0.05 a 0.28 a 0.51 a 0.74 a 0.97 a 1.20 a broadband circuit impedance 0.1 0.2 0 . 1 0 . 2 0 . 1 n e r a t o r - - - > t h s t o w a r d l o a d - 0 . 0 960 mhz 960 mhz 860 mhz 860 mhz z load z source z 0 = 50 w frequency z source w z load w mhz r jx r jx 860 1.4 ?0.8 10.0 8.0 880 1.3 ?0.2 10.0 8.4 900 1.4 0.2 10.0 8.7 920 1.5 0.5 10.0 9.0 940 1.5 1.0 10.1 9.3 960 1.6 1.1 10.3 9.4 z source z load g s d typical performance (cont.)
data sheet 6 of 9 2004-10-05 PTF080101S 080101sf_sch r7 24k v r6 2k v c13 0.001f c12 0.001f bcp56 r5 1.3k v r4 1.2k v lm7805 c11 0.001f v dd qq1 q1 r8 5.1k v 36 pf 7.5pf 2.7 pf 36pf 100 f 36 pf v dd l 1 l 3 l 4 l 5 l 7 l 13 l 15 r10 r11 c4 dut rf_in c5 c6 c7 c8 c9 36 pf c1 5.1k v 10 v l 2 2.4 pf c2 c3 36 pf l 6 l 8 l 9 l 10 l 11 + l 12 l 14 3.0 pf c10 l 16 l 17 c15 10 r9 v c14 + 10 f 0.1 f rf_out reference circuit reference circuit schematic for 960 mhz circuit assembly information dut PTF080101S ldmos transistor pcb 0.76 mm [.030?] thick, e r = 4.5 2 oz. copper rogers tmm4 microstrip electrical characteristics at 960 mhz* dimensions: l x w (mm) dimensions: l x w (in.) l 1 0.023 l , 50.0 w 3.68 x 1.27 0.145 x 0.050 l 2 0.172 l , 16.0 w 25.40 x 0.64 1.000 x 0.025 l 3 0.044 l , 50.0 w 6.99 x 1.27 0.275 x 0.050 l 4 0.084 l , 50.0 w 13.46 x 1.27 0.530 x 0.050 l 5 0.149 l , 9.3 w 21.46 x 11.94 0.845 x 0.470 l 6 0.010 l , 9.3 w 1.52 x 11.94 0.060 x 0.470 l 7 0.023 l , 27.0 w 3.56 x 3.25 0.140 x 0.128 l 8 0.065 l , 11.9 w 9.53 x 9.02 0.375 x 0.355 l 9 0.031 l , 70.0 w 5.08 x 0.64 0.200 x 0.025 l 10 0.108 l , 70.0 w 17.78 x 0.64 0.700 x 0.025 l 11 0.108 l , 70.0 w 17.78 x 0.64 0.700 x 0.025 l 12 0.094 l , 11.9 w 13.72 x 9.02 0.540 x 0.355 l 13 0.041 l , 11.9 w 5.97 x 9.02 0.235 x 0.355 l 14 0.078 l , 50.0 w 12.45 x 1.27 0.490 x 0.050 l 15 0.011 l , 50.0 w 1.78 x 1.27 0.070 x 0.050 l 16 0.076 l , 70.0 w 11.18 x 0.64 0.440 x 0.025 l 17 0.165 l , 70.0 w 24.38 x 0.64 0.960 x 0.025 *electrical characteristics are rounded.
data sheet 7 of 9 2004-10-05 PTF080101S reference circuit (cont.) reference circuit 1 (not to scale) component description manufacturer p/n or comment c2 capacitor, 2.4 pf atc 100b 2r4 c1, c3, c5, c6, c9 capacitor, 36 pf atc 100b 360 c4 capacitor, 7.5 pf atc 100b 7r5 c7 capacitor, 100 f,50 v digi-key p5182-nd c8 capacitor, 2.7 pf atc 100b 2r7 c10 capacitor, 3.0 pf atc 100b 3r0 c11, c12, c13 capacitor, 0.001 f digi-key pcc1772ct-nd c14 capacitor, 10 f, 35 v digi-key pcs6106tr-nd c15 capacitor, 0.1 f digi-key p4525-nd q1 transistor national semiconductor bcp56 qq1 voltage regulator infineon lm7805 r1, r2, r3 resistor, 220 ohm, 1/4w digi-key 220qbk r4 resistor 1.2 k-ohms digi-key p1.2kgct-nd r5 resistor 1.3 k-ohms digi-key p1.3kgct-nd r6 potentiometer 2 k-ohms digi-key 3224w-202etr-nd r7 resistor 24 k-ohms digi-key p24kect-nd r8, r10 resistor 5.1 k-ohms digi-key p5.1kect-nd r9, r11 resistor, 10 ohms digi-key p10ect-nd 1 gerber files for this circuit are available on request. v dd r9 c1 r10 r8 qq1 c12 c13 r5 c15 r4 r7 lm c14 r11 c11 + q1 r6 080101s_assy-dtl 080101s_assy rf_in rf_out r9 c6 c5 c11 c12 c10 c4 r11 c9 c14 r4 r5 r7 c13 qq1 q1 c8 v dd r8 c15 r10 c2 c3 r6 + v dd lm c1 c7 +
data sheet 8 of 9 2004-10-05 PTF080101S package outline specifications package 32259 diagram notes: 1. lead thickness: 0.21 0.03 [.008 .001]. 2. all tolerances 0.127 [.005] unless specified otherwise. 3. pins: d = drain, s = source, g = gate. 4. interpret dimensions and tolerances per asme y14.5m-1994. 5. primary dimensions are mm. alternate dimensions are inches. find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/products . 2x 3.30 [.130] 1.02 [0.040] 0.51 [0.020] 2x 0.200.03 [.008.001] 4x r0.25 [r.010] max. c l l c 0-7 draft angle d g s 10.160.25 [.400.010] 6.86 [.270] 2x 1.650.51 [.065.020] 2x 1.27 [.050] 2x 3.30 [.130] 4x 0.51 [.020] 4x 0.25 max [.010] 6.35 [.250] sq 6.86 [.270] 6.48 [.255] sq 0.740.05 [.028.002] 1.78 [.070] 2.99 0.38 [1.14 .010] h-32259-2-1-2307 lead coplanarity bottom of lead to bottom of package .000.002 (typ) 60 x 6.60 [60 x .260]
data sheet 9 of 9 2004-10-05 goldmos ? is a registered trademark of infineon technologies ag. edition 2004-10-05 published by infineon technologies ag, st.-martin-strasse 53, 81669 mnchen, germany ? infineon technologies ag 2004. all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com/rfpower ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infineon.com to request other information, contact us at: +1 877 465 3667 (1-877-goldmos) usa or +1 408 776 0600 international PTF080101S confidential, limited internal revision history: 2004-10-05 data sheet previous version: 2004-08-23 , preliminary data sheet page subjects (major changes since last revision) add specification data and information, remove preliminary status
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